PART |
Description |
Maker |
W9412G2IB W9412G2IB4 W9412G2IB-6I |
1M × 4 BANKS × 32 BITS GDDR SDRAM Double Data Rate architecture; two data transfers per clock cycle 4M X 32 DDR DRAM, 0.7 ns, PBGA144
|
Winbond WINBOND ELECTRONICS CORP
|
NT5DS4M32EG |
1M X 32 Bits X 4 Banks Double Data Rate Synchronous RAM
|
NanoAmp Solutions
|
1064101200 |
QSFP to QSFP Quad Data Rate PSM4 Active Optical Cable, 40 Gbps Data Rate
|
Molex Electronics Ltd.
|
AD7401 AD7400 |
Isolated Sigma-Delta Modulator (10 MHz Data Rate) From old datasheet system
|
Analog Devices
|
STEVAL-IDS001V2 |
SPIRIT1 - Low Data Rate Transceiver - 315 MHz - USB dongle
|
ST Microelectronics
|
K4D623238B-GQC |
512K x 32Bit x 4 Banks Double Data Rate Synchronous RAM wi Extended Data Out Data Sheet
|
Samsung Electronic
|
K4D26323RA-GC |
1M x 32Bit x 4 Banks Double Data Rate Synchronous RAM with Bi-directional Data Strobe and DLL Data Sheet
|
Samsung Electronic
|
M13L2561616A-2A |
Double-data-rate architecture, two data transfers per clock cycle
|
Elite Semiconductor Mem...
|
M13S5121632A-2S |
Double-data-rate architecture, two data transfers per clock cycle
|
Elite Semiconductor Mem...
|
M14D5121632A-2K |
Internal pipelined double-data-rate architecture; two data access per clock cycle
|
Elite Semiconductor Mem...
|
K4D26323RA K4D26323RA-GC2A K4D26323RA-GC33 K4D2632 |
1M x 32Bit x 4 Banks Double Data Rate Synchronous RAM with Bi-directional Data Strobe and DLL
|
SAMSUNG SEMICONDUCTOR CO. LTD. SAMSUNG[Samsung semiconductor] Samsung Electronic
|